Alternative text: Not defined!
Alternative text: Doped-silicon inks from DuPont Innovalight enable the production of selective emitter solar cells with the addition of a single screen printing step.
Alternative text: RASIRC Steamer (source: RASIRC)
Alternative text: Dr. Masato Shibuya won the Takuma Award 2011
Alternative text: The two inventors of the alternating phase-shift mask (alt-PSM) review a poster during SPIE AL 2011. Prof. Masato Shibuya (left) now of the Tokyo Institute of Polytechnics in Atsugi and formerly of Nikon shows his poster presentation to Dr. M. David Levenson (right) now of BetaSights and formerly of IBM (source: SPIE)
Alternative text: Recessive Self-Aligned Double Patterning (RSADP) process flow shown in cross-sectional schematics (source: Applied Materials)
Alternative text: Recessive Self-Aligned Double Patterning (RSADP) results for contact holes density doubling to 50nm half pitch. (source: Applied Materials)
Alternative text: The ASML NXE:3100 EUVL stepper. (source: ASML)
Alternative text: EUV alternating Phase-Shift Mask (alt-PSM) work by Intel and LBL, a) mask cross-section, b) absorber and phase-edge resist images, and c) 22nm line-space patterns. (source: Intel)
Alternative text: HB-LED GaN-epi on sapphire marks, (LEFT) with conventional illumination, and (RIGHT) with new illumination in EVG620HBL tool. (source: EV Group)
Alternative text: EVG620HBL mask aligner (source: EV Group)
Alternative text: Samsung uses Self-Aligned Reverse Patterning (SARP) for 2Xnm node Flash chips (source: IEDM2010, S05P01)
Alternative text: Not defined!
Alternative text: TEM cross-section of a Flash memory cell showing ~4nm TaN floating-gate (FG) and hafnia-alumina-hafnia (HAH) inter-poly dielectric (IPD). (source: IEDM2010, S05P03)
Alternative text: Renesas' capacitor in porous low-k (CAPL) eliminates W bypass contacts for reduced eDRAM delay (source: IEDM2010, S33P03)
Alternative text: Renesas' capacitor in porous low-k (CAPL) eDRAM structure requires careful control of the etch process to provide smooth sidewalls with a bottom angle of ~88° for void-free filling. (source: IEDM2010, S33P03)
Alternative text: IBM's dual-gated bi-layer graphene device structure (source: IEDM2010)
Alternative text: Columbia U.'s BN top-gate for graphene (source: IEDM2010)
Alternative text: MIT's graphene on insulator FET formed by layer-transfer from from a sacrificial Cu-foil (source: IEDM2010)
Alternative text: Modeling of gm by varying Rs for 70 nm and 1 ?m devices and the improvement of projected fT. (source: IEDM2010)
Alternative text: (IBM's silicon-interposers using Cu TSV along with deep trench capacitors (source: BusinessWire)
Alternative text: Schematic of the gate stack under test and the main technology options implemented in our 300mm High-k/ Metal Gate First CMOS 3DIC via middle baseline. CMOS is done until contact level then the Cu-TSV module is inserted, followed by BEOL. (source: IEDM2010, Session2.1)
Alternative text: Keep out zone for analog devices with 0.5% delta-Ion sensitivity threshold and for digital devices with 5% delta-Ion sensitivity threshold as a function of the number of TSVs in the matrix. (source: IEDM2010, Session2.1)
Alternative text: Schematic of the new Centris platform for AdvantEdge MESA etch chambers (source: Applied Materials)
Alternative text: SEM cross-section of NAND STI structures etched using double-patterning and the MESA Pulsync technology to minimize micro-loading (source: Applied Materials)
Alternative text: ChemetriQ 5000 patterned wafer work-function metrology tool. (Source: Qcept Technologies)
Alternative text: ChemetriQ charge map of a 45nm node GlobalFoundries CMP wafer from a malfunctioning cleaning tool. The dark blue region at the center was charged to -4.5V, which was sufficient to cause yield loss of all the dice in that region. Prior to this charge map being generated, GlobalFoundries had taken this tool offline because of the yield issue with no correlating defectivity reported by optical inspection tools used at the fab. (Source: Qcept Technologies)
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